Avalanche Photodiodes (APDs) Under High Thermal and Protons Irradiation Environments

Ahmed Nabih Zaki Rashed

Electronics and Electrical Communication Engineering Department, Faculty Electronic Engineering, Menouf, 32951, Egypt

E-mail: ahmed_733@yahoo.com

Accepted 15 April, 2012

Abstract

This paper has been examined the high temperature irradiation variations testing in order to be used to determine avalanche photodiode lifetime, even though APD failure mechanisms are more sensitive to increases in current density. As a measured parameter of degradation, the current density is of great significance when searching for failure modes in APD. Raising the current density however, is not really indicative of lifetime since it is more likely a situation to be avoided than one that simulates normal lifetime degradation. The reliability of semiconductor detectors is very dependent on the degradation modes. This paper has investigated deeply some of the degradation performance and capabilities of typical APDs currently used in many communication and sensing systems over wide range of the affecting parameters. APDs are used in systems that require coherent and often single mode light such as high data rate communications and sensing applications. APDs are an attractive receiver choice for photon-starved (low signal) applications, because their internal gain mechanism can improve signal to noise ratio. An optical receiver must also be appropriate for the laser wavelength being used. The near infrared is the preferred wavelength regime for deep space optical communications largely due to the wavelengths of available laser technologies that meet the optical power requirements of a deep space optical link.

Keywords: Proton radiation damage, Optical functional device, High temperature environments and Radiation effects.